uoc_wafer
Union Optronics 社 Wafer / Chips
Epi wafers for LD and LED
Item | Descriptions | Materials | Substrate |
Red Laser | 635nm ~ 690nm Edge emitting laser | InGaAlP | 2 inch GaAs substrate |
Infrared Laser | 780nm ~ 980nm Edge emitting laser | AlGaAs/Al-free active layer | 2 inch GaAs substrate |
Telecom. Laser | 1300nm ~ 1550nm Edge emitting laser | InGaAlAs /InGaAsP | 2 inch InP substrate |
Customer Design | OEM/ODM | OEM/ODM | 2 inch GaAs/InP substrate |
High Speed LED | 650/660nm Resonant Cavity LED without Oxidation Layer | DBR AlxGa1-xAs / AlxGa1-xAs High Index/ Low Index QW InGaP / AlGaInP | 2" SC GaAs Sub. |
High Speed LED | 650/660nm Resonant Cavity LED with Oxidation Layer | DBR AlxGa1-xAs / AlxGa1-xAs High Index/ Low Index QW InGaP / AlGaInP Oxidation Layer Al0.98Ga0.02As | 2" SC GaAs Sub. |
Laser diode chips
Model No. | λp [nm] | Po [mW] | Ith [mA] | Iop [mA] | Vop [V] | SE [W/A] | θ// | θ⊥ |
U-CP-6305123 | 636 | 5 | 24 | 32 | 2.2 | 0.55 | 7.50 | 33 |
U-CP-6505001 | 650 | 5 | 11 | 17 | 2.2 | 0.80 | 8.00 | 36 |
U-CP-6505021 | 650 | 5 | 11 | 17 | 2.2 | 0.80 | 8.00 | 36 |
U-CP-6505142 | 655 | 5 | 23 | 31 | 2.2 | 0.63 | 8 | 28 |
U-CP-66A0095p | 660 | 100 | 80 | 190 | 2.3 | 0.85 | 11.00 | 27 |
U-CP-80B0065 | 808 | 200 | 52 | 225 | 1.75 | 1.15 | 11.0 | 28 |
U-CP-80E0065 | 808 | 500 | 75 | 510 | 1.88 | 1.15 | 11.0 | 28 |
U-CP-9850044 | 980 | 50 | 12 | 75 | 1.5 | 0.80 | 13.00 | 30 |
U-CP-9850081 | 980 | 50 | 12 | 75 | 1.5 | 0.80 | 9.00 | 35 |
U-CP-98A0081 | 980 | 100 | 35 | 135 | 1.6 | 1.00 | 8.00 | 32 |
U-CP-98E0061p | 980 | 500 | 80 | 700 | 1.6 | 0.80 | 10.00 | 36 |
U-CP-1305013p | 1310 | 5 | 7 | 1.25 | 0.40 | 22.00 | 34 |