uoc_wafer
Union Optronics 社 Wafer / Chips
Epi wafers for LD and LED
| Item | Descriptions | Materials | Substrate |
| Red Laser | 635nm ～ 690nm Edge emitting laser | InGaAlP | 2 inch GaAs substrate |
| Infrared Laser | 780nm ～ 980nm Edge emitting laser | AlGaAs/Al-free active layer | 2 inch GaAs substrate |
| Telecom. Laser | 1300nm ～ 1550nm Edge emitting laser | InGaAlAs /InGaAsP | 2 inch InP substrate |
| Customer Design | OEM/ODM | OEM/ODM | 2 inch GaAs/InP substrate |
| High Speed LED | 650/660nm Resonant Cavity LED without Oxidation Layer | DBR AlxGa1-xAs / AlxGa1-xAs High Index/ Low Index QW InGaP / AlGaInP | 2" SC GaAs Sub. |
| High Speed LED | 650/660nm Resonant Cavity LED with Oxidation Layer | DBR AlxGa1-xAs / AlxGa1-xAs High Index/ Low Index QW InGaP / AlGaInP Oxidation Layer Al0.98Ga0.02As | 2" SC GaAs Sub. |
Laser diode chips
| Model No. | Po (mW) | λ (nm) | Ith (mA) | Iop (mA) | SE (W/A) | θ// (°) | θ⊥ (°) | Chip size (um) |
| U-CP-63051B3 | 5 | 635 | 24 | 33 | 0.55 | 7.50 | 33 | 200X300X100 |
| U-CP-6505001 | 5 | 650 | 11 | 17 | 0.80 | 8.00 | 36 | 200X250X100 |
| U-CP-6505021 | 5 | 650 | 11 | 17 | 0.80 | 8.00 | 36 | 250X300X100 |
| U-CP-66A0095p | 100 | 660 | 60 | 170 | 0.90 | 11.00 | 30 | 300X1000X100 |
| U-CP-65300A1 | 30 | 650 | 35 | 65 | 1.00 | 8.00 | 28 | 250X500X100 |
| U-CP-80B00E5 | 200 | 808 | 52 | 225 | 1.15 | 10.00 | 28 | 200X500X100 |
| U-CP-80E0065 | 500 | 808 | 75 | 510 | 1.15 | 11.00 | 28 | 300X500X100 |
| U-CP-83A00A5 | 100 | 830 | 17 | 120 | 1.00 | 10.00 | 18 | 250X500X100 |
| U-CP-9850044 | 50 | 980 | 12 | 75 | 0.80 | 13.00 | 30 | 300X300X100 |
| U-CP-9850081 | 50 | 980 | 12 | 70 | 0.80 | 9.00 | 35 | 250X400X100 |
| U-CP-98A0081 | 100 | 980 | 35 | 135 | 1.00 | 8.00 | 32 | 250X400X100 |
| U-CP-98E0061p | 500 | 980 | 80 | 700 | 0.80 | 10.00 | 36 | 300X500X100 |
| U-CP-1305013p | 5 | 1310 | 5 | -- | 0.40 | 22.00 | 34 | 250X250X110 |
